MOCVD systems respond to demand for higher LED productivity and yield

Manufacturers of equipment used to grow LED layer structures have introduced new systems capable of depositing even more material in a single run, in response to customer demand for higher throughput and more cost-effective production. The new MOCVD systems introduced by Aixtron (Aachen, Germany) and Veeco (Somerset, NJ, USA) can grow gallium nitride-based LED layer structures on as many as 42 or 45 two-inch wafers, respectively, while each offering different attributes.
LED chips are composed of multiple layers of different semiconducting materials, which are deposited onto circular wafers inside a metal-organic chemical vapor deposition (MOCVD) system. This process, known as epitaxy, is critical for determining LED performance characteristics and therefore influences binning of White LEDs.
Rainer Beccard, Aixtrons director of marketing, says that the first AIX 2800G4 Planetary Reactors from Aixtron are now operational at customer sites in Asia, and that a double-digit number of machines have been sold. With a capacity of 42 two-inch wafers, And based on the modular IC (integrated concept) platform, the system has almost double the capacity of the companys previous-largest machine.

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This article was published in the February 2007 issue of LEDs Magazine.
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You can also request a print copy of LEDs Magazine (available by paid subscription). About the Author Tim Whitaker is the Editor of LEDs Magazine February 2007 Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2004 2005 2006 2007 2008 2009

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