NXP NextPower MOSFETs have the industry's lowest RDS (on)

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NXP Semiconductors NXP Semiconductors NV (NASDAQ: NXPI) today announced that its uses in LFPAK NextPower series of 25V and 30V MOSFET will have 15 new products available today. The latest members of these NXP power MOSFET families have found the best balance between the six key parameters and the industry's lowest RDS (on) (25V and 30V are sub-1 mΩ), high performance, high reliability Ideal for switch applications. Traditional methods focus on reducing RDS (on) and Qg, while NXP NextPower uses superjunction technology to optimize the balance between low RDS (on), low Qoss, low Qg(tot) and Qgd for powerful switching. Performance, reducing losses between the drain and source pins while providing excellent SOA performance. In addition, the NXP LFPAK is the most rugged Power-SO8 package in a compact size with an area of ​​only 5mm x 6mm, providing excellent power switching in harsh environments.

Facts / points:

· The NXP NextPower Series 25V and 30V MOSFETs perform exceptionally well with the following six parameters:

Low RDS (on) --- the industry's lowest RDS(on) Power-SO8 package - low I2R loss and excellent performance in SYNC FET or power OR-ing applications

Low Qoss helps reduce losses between the drain and source pins, and reduces the loss of energy stored in the output capacitor (Coss) when voltage changes occur on the output pins.

Low Miller charge (Qgd) helps reduce switching losses and high frequency switching times

SOA performance can withstand overload and fault conditions very well

Low gate charge (Qg) reduces losses in the gate drive circuit

Excellent rated junction temperature Tj(max), rugged Power-SO8 LFPAK package provides protection against harsh conditions and high reliability requirements

· Main application areas include synchronous buck regulators, DC-DC converters, regulator modules, and power OR-ing

Positive evaluation:

· Charles Limonard, Marketing Manager, Power MOSFET Division, NXP Semiconductors, said: "The industry's lowest RDS (on) at 25V and 30V is only part of its outstanding performance. The real breakthrough in the latest NextPower devices is that we can also control MOSFETs. Every aspect of behavior -- transcending on-resistance and gate charge -- delivers high performance, reliability and maximum efficiency for switching applications."