Japan's leading semiconductor manufacturer Rom Corporation (Headquarters: Kyoto, Japan) developed a high-voltage power MOSFET "R5050DNZ0C9" (500V/50A/typ) that achieves the industry's top low on- resistance for the power conditioner market for solar power generation. , 34mΩmax45mΩ).
This product is available in the TO247PLUS package with excellent heat dissipation. Samples were supplied in mid-September 2011 (sample price: 1,000 yen/piece), and volume production began in December 2011.
As the trend of energy conservation gradually deepens, as the representative of renewable energy, the scale of the solar power generation market continues to expand. In the field of power regulators, efforts are being made to achieve power savings through improved power conversion efficiency, so the demand for power MOSFETs that achieve lower losses continues to rise. ROHM has also been using multi-layer epitaxial growth methods to provide customers with multi-layer vertical pn junction super junction structure power MOSFETs , which has continued to contribute to high efficiency. However, since the manufacturing process of this method is complicated, it has a problem that it is difficult to refine and improve the production performance.
This time, ROHM uses a vertical p-layer one-time Si deep etching technology to reduce the on- resistance by about 47% compared with conventional products through miniaturization and optimization of impurity concentration. This product is not only well suited for converter parts that are easily represented by low on- resistance , but also can be applied to inverters in combination with fast recovery diodes or SiC Schottky barrier diodes manufactured by ROHM. Since the loss during power conversion can be greatly reduced, it will greatly contribute to the efficiency of solar power generation. In addition, in order to apply to a wider variety of circuit methods, ROHM will continue to expand the "PrestoMOSTM" series while further improving the high-voltage product line with this technology.
In the future, ROHM will continue to use the original advanced processing technology to continuously promote the development of forward-looking transistor products that meet customer needs.
1) Industry's top low on-resistance
2) TO247PLUS package with excellent heat dissipation
A deep etching technique using a vertical p-layer one-shot molding.
Not only the process can be simplified, but also it is suitable for miniaturization.
※ Take the traditional product as "1" as an example
? On-resistance
The resistance value when the power device is operating. It is the most important parameter affecting the performance of the power MOSFET. The smaller the value, the higher the performance.
Super junction MOSFET
With the widening of the depletion layer in three dimensions, a power MOSFET with lower loss than conventional products is realized.
?SiC (Standard Industrial Classification: silicon carbide)
The band gap is about three times that of silicon, the dielectric breakdown electric field is about 10 times, and the thermal conductivity is about three times. It is a compound semiconductor with excellent physical properties. These characteristics are suitable for power device applications and high temperature operation. ROHM achieved mass production of Schottky barrier diodes in April 2010 and achieved mass production of MOSFETs in December 2010.
?"PrestoMOSTM" series
A family of high-voltage MOSFETs with low on-resistance, low Qg, and high-speed trrization of internal diodes.
(Presto means: a musical term that means "extremely fast" from Italian.)
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